Theoretical analysis and modelling of degradation for III–V lasers on Si

Abstract InAs/GaAs quantum-dot (QD) lasers offer a promising method to realise Si-based on-chip light sources. However, the monolithic integration of III–V materials on Si introduces high density threading dislocations (TDs), which limits performance such laser device in terms lifetime. Here, we proposed kinetic model including degradation term and saturation simulate process caused by TDs early stage operation. By using rate equation model, current wetting layer, where concentrate, is calculated. We compared QD with different cavity lengths quantum-well lasers, both are directly grown substrates, varying fitting parameters calculation densities model.